@Article{SouzaAzevBaldFerr:2012:InBoDo,
               author = "Souza, Fernando A. and Azevedo, Adriana Faria and Baldan, 
                         Maur{\'{\i}}cio R. and Ferreira, Neiden{\^e}i Gomes",
          affiliation = "{} and {Instituto Nacional de Pesquisas Espaciais (INPE)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)}",
                title = "The influence of boron doping in the growth of 
                         ultra/nanocrystalline diamond films",
              journal = "Materials Research Society Symposium Proceedings",
                 year = "2012",
               volume = "1395",
               number = "Diamond Electronics and Biotechnology - Fundamentals to 
                         Applications V",
                pages = "57--62",
             keywords = "Average grain size, Boron-doped, Boron-doping, Columnar 
                         structures, Cross section, Grain size, Hot-filament chemical vapor 
                         deposition, Nanocrystalline diamond films, Nanocrystalline 
                         diamonds, NCD films, Renucleation, Silicon substrates.",
             abstract = "Boron-doped nanocrystalline diamond (BDND) films were grown on 
                         silicon substrates by hot filament chemical vapor deposition in 
                         Ar/H2/CH4 gas mixtures. The boron source was obtained from an 
                         additional H2 line passing through a bubbler containing B2O3 
                         dissolved in methanol with different B/C ratios. The transition 
                         from ultrananocrystalline to nanocrystalline diamond films is 
                         clearly shown by the addition of boron dopant to the growth gas 
                         mixture. The morphology and structure of these films have markedly 
                         different properties. The top view and the cross section of the 
                         films were characterized by scanning electron microscopy showing 
                         the transition from ultrananocrystalline growth (renucleation 
                         process) to a columnar structure of NCD films. Finally, the grain 
                         size was obtained from X-ray diffraction patterns of the films. 
                         The diamond average grain size increased from 10 to 35 nm for 
                         films with 2000 and 30,000 ppm B/C, respectively.",
                  doi = "10.1557/opl.2012.444",
                  url = "http://dx.doi.org/10.1557/opl.2012.444",
                 issn = "0272-9172",
                label = "lattes: 3838039471471060 2 SouzaAzevBaldFerr:2012:InBoDo",
             language = "en",
        urlaccessdate = "03 maio 2024"
}